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UNISONIC TECHNOLOGIES CO., LTD 2SB857
SILICON PNP TRANSISTOR
DESCRIPTION
Low frequency power amplifier.
PNP SILICON TRANSISTOR
1 TO-126C
1
TO-252
*Pb-free plating product number: 2SB857L
ORDERING INFORMATION
Order Number Normal Lead Free Plating 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T Package TO-126C TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E Packing Bulk Tape Reel Tube
2SB857L-x-T6C-K (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) K: Bulk, R: Tape Reel, T: Tube (2) T6C: TO-126C, TN3: TO-252 (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATING (Ta=25 )
PARAMETER Collector-Base Voltages Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (IC Peak) SYMBOL VCBO VCEO VEBO IC IC(PEAK)
PNP SILICON TRANSISTOR
RATINGS UNIT -130 V -100 V -5 V -4 A -8 A TO-126C 1.5 W Total Power Dissipation PD TO-252 1.9 W Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25 )
PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-10A, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=-50mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=-10A, IC=0 Collector-Emitter Saturation Voltage *VCE(SAT) IC=-2A, IB=-0.2A Base-Emitter Saturation Voltage *VBE(ON) VCE=-4V, IC=-1A Collector Cut-off Current ICBO VCB=-130V, IC=0 *hFE1 VCE=-4V, IC=-0.1A DC Current Gain *hFE2 VCE=-4V, IC=-1A Transition Frequency fT VCE=-4V, IC=-500mA, f=100MHz Note *Pulse Test: Pulse Width 380S, Duty Cycle 2%. MIN -130 -100 -5 TYP MAX UNIT V V V V V A
-1 -1 -1 35 60 15 320
MHz
CLASSIFICATION OF hFE2
CLASSIFICATION RANGE B 60 ~ 120 C 100 ~ 200 D 160 ~ 320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
1000 hFE vs. Collector Current hFE @ VCE=4V Saturation Voltage (mV) 10000
PNP SILICON TRANSISTOR
Saturation Voltage vs. Collector Current
100
1000
VBE(SAT) @ IC=10I B
hFE 10
100 VBE (SAT ) @ IC=10I B
1 1
10
1000 100 Collector Current (mA)
10000
10
1
10
1000 100 Collector Current (mA)
10000
10000
On Voltage vs. Collector Current
Capacitance vs. Reverse-Biased Voltage 1000
On Voltage (mV)
1000
VBE(ON) @ VCE=4V
Capacitance (pF)
100 C ob
100 1
10
100 1000 Collector Current (mA)
10000
10 1
10 Reverse-Biased Voltage (V)
100
Safe Operating Area 10 PT=1ms
Collector Current, IC (A)
1 PT=1s PT=100ms
0.1 1
10
100
1000
Forward Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SB857
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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